april 2011 FDPF190N15A n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDPF190N15A rev. a2 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter rating units v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 27.4 a - continuous (t c = 100 o c) 17.4 i dm drain current - pulsed (note 1) 110 a e as single pulsed avalanche energy (note 2) 261 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 33 w - derate above 25 o c0.26w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter rating units r jc thermal resistance, junction to case 3.8 o c/w r ja thermal resistance, junction to ambient 62.5 FDPF190N15A n-channel powertrench ? mosfet 150v, 27.4a, 19m features ?r ds(on) = 14.7m ( typ.)@ v gs = 10v, i d = 27.4a ? low gate charge ( typ. 30nc) ?low c rss ( typ. 56pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for server/telecom psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d to-220f (retractable) g d s
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDPF190N15A FDPF190N15A to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.14 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 27.4a - 14.7 19.0 m g fs forward transconductance v ds = 10v, i d = 27.4a (note 4) -64-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2020 2685 pf c oss output capacitance - 700 930 pf c rss reverse transfer capacitance - 56 85 pf c oss(er) energy related output capacitance v ds = 75v, v gs = 0v - 252 - pf q g(tot) total gate charge at 10v v ds = 120v, id = 27.4a v gs = 10v -3039nc q gs gate to source gate charge - 8.8 - nc q gd gate to drain ?miller? charge - 7.3 - nc t d(on) turn-on delay time v dd = 75v, i d = 27.4a v gs = 10v, r gen = 4.7 (note 4, 5) -1846ns t r turn-on rise time - 16 42 ns t d(off) turn-off delay time - 32 74 ns t f turn-off fall time - 8 26 ns esr equivalent series resistance (g-s) f = 1mhz - 1.5 - i s maximum continuous drain to source diode forward current - - 27.4 a i sm maximum pulsed drain to source diode forward current - - 110 a v sd drain to source diode forward voltage v gs = 0v, i sd = 27.4a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 27.4a di f /dt = 100a/ s, v dd = 120v (note 4) -76-ns q rr reverse recovery charge - 0.18 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 13.2a, r g = 25 , starting t j = 25 c 3. i sd 27.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 2 4 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 23456 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 255075100125 0.010 0.015 0.020 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 200 5 10 100 1000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 8 16 24 32 0 2 4 6 8 10 *note: i d = 27.4a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 27.4a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 300 0.01 0.1 1 10 100 500 100ms 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 20 25 30 i d , drain current [a] t c , case temperature [ o c] 0 255075100125150 0.0 0.5 1.0 1.5 2.0 2.5 e oss , [ j ] v ds , drain to source voltage [ v ]
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.8 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDPF190N15A n-channel powertrench ? mosfet FDPF190N15A rev. a2 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2500v
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unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i54
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